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90910 URF1660 EZ12D5 ISL7457 DTA14 53629490 0524D SP612005
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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB772
DESCRIPTION With TO-126 package Complement to type 2SD882 APPLICATIONS Suited for the output stage of 3 watts audio amplifier ,voltage regulator ,DCDC converter and relay driver
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER

Collector-base voltage
INCH
Collector-emitter voltage
Emitter-base voltage
ANG
EMIC ES
Open emitter Open base Open collector
CONDITIONS
OND
TOR UC
VALUE -40 -30 -5 -3 -7
UNIT V V V A A
Collector current (DC) Collector current-Peak Ta=25ae
1.0 W 10 150 -55~150 ae ae
PD
Total power dissipation TC=25ae
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-2.0A; IB=-0.2A IC=-2.0A ;IB=-0.2A VCB=-30V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.1A ; VCE=-5V IE=0; f=1MHz ; VCB=-10V 30 60 80 MIN -30 -0.3 -1.0 TYP.
2SB772
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB
MAX
UNIT V
-0.5 -2.0 -1.0 -1.0 |I |I
V V A A
400 MHz pF
Collector output capacitance

Q P E 160-320 200-400
hFE-2 Classifications R 60-120
HAN INC
100-200
SEM GE
OND IC
TOR UC
55
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB772
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB772
SEM GE
HAN INC
OND IC
TOR UC
4
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB772
SEM GE
HAN INC
OND IC
TOR UC
5


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